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Diode Model Pspice

Diode Model Pspice

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Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is Diods by the parameters CJO, VJ, and M. The temperature dependence of the saturation current is defined by the parameters EG, the band gap Diode Model Pspice and Diode Model Pspice, the saturation current temperature exponent.

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Text Mode Any model can be edited or created in the Model Editor when using the text mode.

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